| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device, which improves high temperature durability, quality and reliability of a bonded part of a semiconductor element and a substrate by using a sinter bonding material.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: (a) a process of preparing an insulating or conductive substrate; (b) a process of arranging a sinter bonding material 2 at a bonding region 3a on a principal surface of the substrate (i.e., insulating substrate 3); and (c) a bonding process of bonding the substrate (i.e., insulating substrate 3) and the semiconductor element 1 via the bonding material 2 by sintering the bonding material 2 while pressure contacting a semiconductor element bonding surface which is a surface to be provided for bonding of the semiconductor element 1 to the bonding material 2. The bonding region 3a in the process (b) lies inside the bonding surface (i.e., region 3b) of the semiconductor element 1 in plan view and the bonding material 2 does not protrude outward from the bonding surface of the semiconductor element 1 in plan view after the process (c). |
