CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS

摘要

Methods of forming memory cells having conductive nanodots over a charge storage material are useful in non-volatile memory devices and electronic systems.

主权项

1. A method of forming a memory cell, the method comprising:
forming a first dielectric over a semiconductor; forming a charge storage material over the first dielectric; forming conductive nanodots over the charge storage material; forming a second dielectric over the conductive nanodots; forming a control gate over the second dielectric; and forming source/drain regions in the semiconductor generally adjacent the first dielectric.