| 摘要 |
<p>A chemical mechanical polishing (CMP) system has a first polishing device which performs a first CMP process on a workpiece, and a second polishing device which performs a second CMP process on the workpiece. A reworking polishing device which includes a reworking platen and a reworking CMP head performs a sub CMP process on the workpiece when the workpiece is located on the reworking platen. A measuring device measures one or more parameters of the workpiece. A transferring device transfers the workpiece among the first polishing device, the second polishing device, the reworking polishing device, and the measuring device. A controller determines the selective transfer of the workpiece to the reworking polishing device by the transferring device only when it is not satisfied with the parameters.</p> |
