| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem in the case of forming in an embedded gate transistor, an asymmetric structure in which a bit-con diffusion layer is formed deep that when ions are implanted through a bit contact hole, the ions are implanted to the diffusion layer side which is necessary to be formed shallow and intended transistor characteristics cannot be achieved.SOLUTION: A semiconductor device manufacturing method comprises: forming a space part 9-Sp in a first mask film 9 on a semiconductor substrate; forming a sidewall film 10 and performing ion implantation on a part of the semiconductor substrate 1 corresponding to just under a space 10r in the space part to form a bit-con diffusion layer 11; subsequently, filling the space 10r with a second mask film; selectively removing the sidewall film 10 by using the first mask film 9 and the second mask film 12 as masks to form a first groove corresponding to a gate trench formed on the substrate 1. By the method, the bit-con diffusion layer 11 can be formed in a self-alignment manner with the gate trench. |
