发明名称 |
Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure |
摘要 |
<p>Provided is an epitaxial substrate (10) for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate (10) for semiconductor device obtained by forming, on a base substrate (1), a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer (3) formed of a first group III nitride having a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1, z1>0); and a barrier layer (5) formed of a second group III nitride having a composition of In x2 Al y2 N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter ± satisfying a range where 0<±<1.</p> |
申请公布号 |
EP2296172(B1) |
申请公布日期 |
2014.04.23 |
申请号 |
EP20100172264 |
申请日期 |
2010.08.09 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
MIYOSHI, MAKOTO;KURAOKA, YOSHITAKA;SUMIYA, SHIGEAKI;ICHIMURA, MIKIYA;SUGIYAMA, TOMOHIKO;TANAKA, MITSUHIRO |
分类号 |
H01L21/335;H01L29/04;H01L29/778 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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