发明名称 E-fuse structure design in electrical programmable redundancy for embedded memory circuit
摘要 An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
申请公布号 US8629050(B2) 申请公布日期 2014.01.14
申请号 US201213443550 申请日期 2012.04.10
申请人 THEI KONG-BENG;CHENG CHUNG LONG;LIU CHUNG-SHI;CHUANG HARRY-HAK-LAY;WU SHIEN-YANG;CHEN SHI-BAI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 THEI KONG-BENG;CHENG CHUNG LONG;LIU CHUNG-SHI;CHUANG HARRY-HAK-LAY;WU SHIEN-YANG;CHEN SHI-BAI
分类号 H01L21/02;H01L23/525;H01L23/532;H01L29/00 主分类号 H01L21/02
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