发明名称 |
E-fuse structure design in electrical programmable redundancy for embedded memory circuit |
摘要 |
An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer. |
申请公布号 |
US8629050(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201213443550 |
申请日期 |
2012.04.10 |
申请人 |
THEI KONG-BENG;CHENG CHUNG LONG;LIU CHUNG-SHI;CHUANG HARRY-HAK-LAY;WU SHIEN-YANG;CHEN SHI-BAI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
THEI KONG-BENG;CHENG CHUNG LONG;LIU CHUNG-SHI;CHUANG HARRY-HAK-LAY;WU SHIEN-YANG;CHEN SHI-BAI |
分类号 |
H01L21/02;H01L23/525;H01L23/532;H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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