发明名称 |
DEVICE AND METHOD FOR FORMING SHARP EXTENSION REGION WITH CONTROLLABLE JUNCTION DEPTH AND LATERAL OVERLAP |
摘要 |
A method for forming a semiconductor device includes forming a gate stack on a monocrystalline substrate. A surface of the substrate adjacent to the gate stack and below a portion of the gate stack is amorphorized. The surface is etched to selectively remove a thickness of amorphorized portions to form undercuts below the gate stack. A layer is epitaxially grown in the thickness and the undercuts to form an extension region for the semiconductor device. Devices are also provided. |
申请公布号 |
US2013264614(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201213611387 |
申请日期 |
2012.09.12 |
申请人 |
LAUER ISAAC;LEOBANDUNG EFFENDI;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAUER ISAAC;LEOBANDUNG EFFENDI;SHAHIDI GHAVAM G. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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