NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING VERTICAL TOPOLOGY AND METHOD FOR MAKING THE SAME

摘要

PURPOSE: A vertical type nitride semiconductor light emitting device and a method for manufacturing the same are provided to secure low operation voltage by improving current injection and a current spreading effect. CONSTITUTION: A semiconductor structure(30) is formed on a first electrode. An undoped semiconductor layer(60) is formed on the semiconductor structure. An opening part passes through the undoped semiconductor layer. A second electrode includes an insertion part and an extension part. A light extraction structure(50) is formed in the undoped semiconductor layer.