| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic memory element in which magnetic domain walls can be controlled easily. <P>SOLUTION: A magnetic memory element 100 comprises: a magnetic thin wire 20 which extends in a first direction and has a plurality of magnetic domains separated by magnetic domain walls; a pair of first electrodes 30 which can supply a current to the magnetic thin wire 20 in the first direction or a direction reverse to the first direction; a first isolating layer 40 which is provided on the magnetic thin wire 20 in a second direction perpendicular to the first direction; a plurality of second electrodes 50 which are provided to be spaced apart in the second direction on the first isolating layer 40; and a third electrode 60 which is electrically connected to the plurality of second electrodes 50. <P>COPYRIGHT: (C)2013,JPO&INPIT |
