发明名称 |
TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION |
摘要 |
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials. |
申请公布号 |
US2013093497(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113274001 |
申请日期 |
2011.10.14 |
申请人 |
LEE JACK C.;ZHAO HAN;THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM |
发明人 |
LEE JACK C.;ZHAO HAN |
分类号 |
H03K17/74;H01L21/336;H01L29/78 |
主分类号 |
H03K17/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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