| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing strain generated in a predetermined direction in a semiconductor device layer laminated on a surface of a substrate. <P>SOLUTION: The semiconductor device 1 includes the substrate 2, made of a nitride-based semiconductor, which has principal surfaces parallel with a first direction (A direction) and a second direction (B direction) and where steps 2a extending in the first direction are formed, a base layer 3 formed on the substrate 2 and made of a nitride-based semiconductor, and a first semiconductor layer 4 and a second semiconductor layer 5. Lattice constants of the base layer 3 and second semiconductor layer 5 in the second direction in the absence of strain are larger than that of the substrate 2 in the second direction in the absence of strain, and lattice constants of the base layer 3 and second semiconductor layer 5 in the second direction while they are formed on the principal surfaces of the substrate 2 are larger than that of the substrate 2 in the second direction, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT |
