| 摘要 |
PROBLEM TO BE SOLVED: To make characteristics relating to self-excited oscillation and characteristics as a normal semiconductor laser compatible with each other in a nitride semiconductor laser device which is electrically separated into two or more regions by a parting line crossing the longitudinal direction of a resonator. SOLUTION: The nitride semiconductor laser device includes at least an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer, a p-side electrode, an n-side electrode, and a resonator on a substrate. At least one of the p-side electrode and the n-side electrode is electrically separated into two or more regions by a dividing region crossing the longitudinal direction of the resonator. The carrier density in a non-excited state of a saturable absorption region which is at least one region separated by the dividing region is higher than the carrier density in the non-excited state of the active layer of a gain region which is at least the other region. COPYRIGHT: (C)2011,JPO&INPIT
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