| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which increases a dynamic range for high-light-level image taking in a CMOS image sensor with W pixels.SOLUTION: For example, within a range where photoelectrons of W pixels are not saturated, a Y signal is generated using all photoelectrons of R pixels, G pixels, B pixels and the W pixels. In the high-light-level image taking, when it is determined that the photoelectrons of the W pixels are saturated from each photoelectron of the R pixels, the G pixels, the B pixels, the Y signal is generated from each photoelectron of the R pixels, the G pixels, and the B pixels. Simultaneously, the W pixels are reset for a plurality of times in an imaging frame so that the photoelectrons of the W pixels are not saturated. |
