发明名称 |
Ladungsausgleich in der Aktivfläche und Kantenabschlussfläche eines MOSFETs |
摘要 |
A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at the bottom of the trenches located in the active area. The second plurality of implants formed at the bottom of the trenches located in the active area causes the implants formed at the bottom of the trenches located in the active area to reach a predetermined concentration. In so doing, the breakdown voltage of both the active and edge termination areas can be made similar and thereby optimized while maintaining advantageous RDson. |
申请公布号 |
DE112008002423(T5) |
申请公布日期 |
2010.11.04 |
申请号 |
DE20081102423T |
申请日期 |
2008.10.02 |
申请人 |
VISHAY-SILICONIX, SANTA CLARA |
发明人 |
CHEN, QUFEI;TERRILL, KYLE;SHI, SHARON |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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