| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the process of fabricating a semiconductor device which ensures planarization and alignment marker level difference reliably by forming the alignment marker level difference only once, by providing an optimal combination of the alignment marker level difference and the amount of polishing planarization and checking the amount of polishing required for planarization concretely and simply before polishing. <P>SOLUTION: The process of fabricating the semiconductor device includes a step of forming the alignment marker level difference with a level difference L in a first conductivity type silicon substrate, a first polishing step of polishing an over deposit produced at the opening of a trench during epitaxial growth until at least an oxide film under the over deposit is exposed, a step of measuring the thickness M of a residual oxide film on the major surface of the silicon substrate following to the first polishing step, a step of removing the residual oxide film, and a second polishing step of polishing the major surface of the silicon substrate from which the residual oxide film is removed and on which a parallel pn junction is formed with an amount of polishing of M+0.1 μm or more and L-0.2 μm or less. <P>COPYRIGHT: (C)2010,JPO&INPIT |
