VERTICAL TYPE SEMICONDUCTOR MEMORY DEVICE, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR OPERATING THE SAME

摘要

PURPOSE: A vertical type semiconductor memory device, a manufacturing method thereof and an operating method thereof are provided to increase a read sensing margin by expanding a memory window. CONSTITUTION: A substrate includes a first impurity region(104). A single crystal semiconductor pattern is formed on the first impurity region of the substrate and has a second impurity region under the upper surface while having a filler shape. A gate insulating layer structure is formed on the sidewall of the single crystal semiconductor pattern and includes a charge storage pattern(121b). A gate electrode(122a) faces the sidewall of the single-crystal semiconductor pattern and has the upper side which is lower than the semiconductor pattern.