| 摘要 |
PURPOSE: A semiconductor light emitting device and a fabrication method thereof are provided to prevent the deterioration of an LED chip by minimizing the bend of the semiconductor layer due to impact in bonding. CONSTITUTION: In a semiconductor light emitting device and a fabrication method thereof, a light emitting structure is formed by a compound semiconductor layer. A first electrode(170) is formed under the light emitting structure. An impact protection element(155) is formed on the light emitting structure corresponding to the first electrode. The electrode layer is formed on the light emitting structure. A conductive supporting member(160) is formed on the impact protection member. |
