| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor device is provided to prevent the dispersion of an impurity to a channel region by forming a lightly doped drain through ion implantation and improving a hot carrier property. CONSTITUTION: A gate oxidation film(12) and a gate electrode(20) are successively formed on a silicon substrate(10). A first spacer is formed on both sidewalls of the gate electrode. A source/drain region(40) is formed on the substrate surface at the both side of the gate electrode. The first spacer is removed, and the first LCD area(50) is formed on the substrate surface at the both sides of the gate electrode. The second spacer(60) is formed on the both sides of the gate electrode, and the second LCD area(70) is formed on the substrate surface at the both sides of the gate electrode.</p> |
