发明名称 SLURRY FOR CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: Slurry for chemical mechanical polishing is provided to effectively remove scratch and a damaged surface layer and to improve polishing rate through organic combination of an abrasive, an oxidizer and etchant. CONSTITUTION: Slurry for chemical mechanical polishing includes an abrasive, an oxidizer, and an etchant. The abrasive has more than hardness of the colloidal silica and less than hardness of a diamond. The abrasive is any one of alumina(Al2O3), zirconia(ZrO2), SiC, B4C, cBN, and diamond. The oxidizer has pH 14 or less and the electrochemical potential of the oxidizer is not smaller than 1.
申请公布号 KR20090109328(A) 申请公布日期 2009.10.20
申请号 KR20080034717 申请日期 2008.04.15
申请人 NEOSEMITECH INC. 发明人 SEO, SOO HYUNG;KWON, WOO SANG;OH, MYUNG HWAN
分类号 C09K3/14 主分类号 C09K3/14
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