| 摘要 |
The present invention provides an integrated circuit with a floating body transistor comprising two source/drain regions and a floating body region arranged between the two source/drain regions comprising: a back gate electrode separated from the floating body by a first dielectric layer; a control gate electrode, separated from the floating body by a second dielectric layer and overlying the back gate electrode; and a third dielectric layer arranged between the back gate electrode and the control gate electrode. The present invention provides also a method of manufacturing an integrated circuit and a method of operating an integrated circuit.
|
