发明名称 |
MEMORY WITH LEVEL SHIFTING WORD LINE DRIVER AND METHOD THEREOF |
摘要 |
A memory (102) includes a bit cell array (120) including a plurality of word lines and address decode circuitry (116) having an output to provide a predecode value. The address decode circuitry (116) includes a first plurality of transistors having a first gate oxide thickness. The memory (102) further includes word line driver circuitry (118) having an input coupled to the output of the address decode circuitry (116) and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.
|
申请公布号 |
KR20090017521(A) |
申请公布日期 |
2009.02.18 |
申请号 |
KR20087027869 |
申请日期 |
2008.11.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
LISTON THOMAS W.;CHOWDHURY NAGLE SHAHNAZ P.;PELLEY III PERRY H. |
分类号 |
G11C8/08;G11C5/14 |
主分类号 |
G11C8/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|