| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method in which a large amount of nitrogen is not introduced into a silicon oxide film and a dangling bond is prevented from being generated. SOLUTION: The plasma processing method includes the steps of: preparing a silicon substrate where a silicon oxide film is formed; performing plasma processing by introducing nitrogen gas on the silicon oxide film to generate plasma; and nitrifying an upper part of the silicon oxide film with the plasma to change the upper part of the silicon oxide film into a silicon nitride film. COPYRIGHT: (C)2009,JPO&INPIT
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