| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a finish-polishing method which can obtain a silicon single-crystal wafer with less PID (polishing induced defect), and also a silicon single-crystal wafer finish-polished by the finish-polishing method. <P>SOLUTION: Of a plurality of polishing steps in the method of finish-polishing a silicon single-crystal wafer by polishing the silicon single crystalline wafer with a polishing slurry provided between the silicon single-crystal wafer and a polishing cloth, in a final finish-polishing step, polishing rate is set at 10 nm/min or less for finish polishing. The silicon single-crystal wafer obtained by the finish-polishing method is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
