| 摘要 |
An ion implanting apparatus using plasma is provided to stably generate plasma in the pressure condition of a large area by forming a ring-shaped first chamber and to reduce the generation of arching within a second chamber in an ion insertion process. An ion implanting apparatus using plasma includes a plasma generating unit(30), an ion implanting unit(20), and a conductor(23). The ion implanting unit implants the ion of plasma generated in the plasma generating unit in a sample. The conductor is placed in the ion implanting unit, and is grounded to prevent electric charge. The plasma generating unit includes a first chamber(35) which forms a space where the plasma is generated, a coil antenna(34) which is placed at one side of the first chamber and induces the plasma, and a power supply unit(37) which supplies energy to the coil antenna.
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