发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of reducing deposits depositing on a workpiece. <P>SOLUTION: The plasma processing apparatus comprises an etching apparatus for etching the workpiece 2 by supplying etching gas to a processing chamber 1; and an ashing apparatus for ashing the workpiece 2 by supplying ashing gas to the chamber 1. A diameter (b) of the placement section of the placement stage of the ashing apparatus is smaller than a diameter (a) of the placement section of the placement stage of the etching apparatus, and the diameter (a) of the placement section of the placement stage of the etching apparatus is smaller than that of the workpiece. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007035948(A) |
申请公布日期 |
2007.02.08 |
申请号 |
JP20050217538 |
申请日期 |
2005.07.27 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KOBAYASHI HIROYUKI;IZAWA MASARU |
分类号 |
H01L21/3065;H01L21/304;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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