发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of reducing deposits depositing on a workpiece. <P>SOLUTION: The plasma processing apparatus comprises an etching apparatus for etching the workpiece 2 by supplying etching gas to a processing chamber 1; and an ashing apparatus for ashing the workpiece 2 by supplying ashing gas to the chamber 1. A diameter (b) of the placement section of the placement stage of the ashing apparatus is smaller than a diameter (a) of the placement section of the placement stage of the etching apparatus, and the diameter (a) of the placement section of the placement stage of the etching apparatus is smaller than that of the workpiece. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007035948(A) 申请公布日期 2007.02.08
申请号 JP20050217538 申请日期 2005.07.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KOBAYASHI HIROYUKI;IZAWA MASARU
分类号 H01L21/3065;H01L21/304;H05H1/46 主分类号 H01L21/3065
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