HYBRID CMOSFET AND FABRICATING METHOD THEREOF

摘要

A hybrid CMOSFET(complementary metal oxide semiconductor field effect transistor) is provided to easily control a threshold voltage and advantageously improve short channel effect by including nMOSFET of a recess channel structure and a pMOSFET of a pin type. An isolation layer for defining an active region(120a,120b) is formed on a semiconductor substrate(100). An nMOS region and a pMOS region are defined in the active region. A hard mask sacrificial pattern is formed on the semiconductor substrate, exposing a semiconductor substrate region for forming a gate. By using the hard mask sacrificial pattern and a photoresist pattern covering the pMOS region as an etch protection layer, the exposed semiconductor substrate in the nMOS region is etched by a predetermined depth to form a recess trench. By using the hard mask sacrificial pattern and a photoresist pattern covering the nMOS region as an etch protection layer, the isolation layer in the periphery of the pMOS region is etched by a predetermined depth so that at least two confronting lateral surfaces of the pMOS region are exposed to form a pin that protrudes from the semiconductor substrate wherein the surface part of the pin is used as a channel region. A gate insulation layer is formed on the semiconductor substrate, made of a dielectric material with a high dielectric constant. A gate is formed by a damascene method using the hard mask sacrificial pattern as a stop layer.