| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method preferable for a high speed etching processing with high accuracy. <P>SOLUTION: The plasma processing apparatus comprises a processing chamber 104 to which a vacuum exhaust apparatus is connected and which is reducible in pressure therein, a gas supply apparatus 105 into the processing chamber 104, plasma generation means for generating plasma in the processing chamber, and high frequency voltage application means for applying high frequency voltage to a material (wafer) 114 to be processed. In the apparatus, the high frequency voltage application means comprises a high frequency pulse power source 303 for generating pulsed voltage, means 302 for converting a pulsed voltage waveform to a sinusoidal one, and means 301 for selecting the pulsed voltage waveform and the sinusoidal voltage waveform. The pulsed voltage waveform or the converted sinusoidal voltage waveform is applied to the material 114 to be processed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
