发明名称 CMOS image sensor and fabricating method thereof
摘要 A CMOS image sensor and fabricating method thereof enable enhanced photo-response characteristics and protect a microlens in packaging by embedding the microlens in a passivation layer pattern. The image sensor may include a semiconductor substrate, a photodiode, a metal line, an insulating layer, a passivation layer pattern, and a microlens formed to be embedded in the passivation layer pattern.
申请公布号 US2006145216(A1) 申请公布日期 2006.07.06
申请号 US20050319477 申请日期 2005.12.29
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 LEE SANG G.
分类号 H01L31/062;H01L31/113 主分类号 H01L31/062
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