发明名称 |
NITRIDATION OF HIGH-K DIELECTRIC FILMS |
摘要 |
The present invention promotes incorporation of nitrogen (e.g., nitridation) into high-k dielectric films using a low temperature process. Further, the present invention provides an in-situ method; that is formation of the high-k dielectric film and nitridation of the film are carried out in the same process chamber during deposition of the film, as opposed to the conventional post processing techniques. In another aspect, a method for depositing a multi-layer material for use as a gate dielectric layer in semiconductor devices is provided. |
申请公布号 |
WO2005050715(A3) |
申请公布日期 |
2006.05.18 |
申请号 |
WO2004US38844 |
申请日期 |
2004.11.17 |
申请人 |
AVIZA TECHNOLOGY, INC.;SENZAKI, YOSHIHIDE |
发明人 |
SENZAKI, YOSHIHIDE |
分类号 |
C23C16/02;C23C16/30;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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