| 发明名称 |
POWER SWITCH DEVICE |
| 摘要 |
A power switch device includes a transistor and an ESD protection circuit. The transistor includes a source, a drain, and a gate, wherein a well region is disposed between the source and the drain. One end of the ESD protection circuit is coupled to the gate and another end thereof is coupled to the well region so as to form a protection circuit between the gate and the source and between the gate and the drain simultaneously. |
| 申请公布号 |
US2016190118(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514642756 |
申请日期 |
2015.03.10 |
| 申请人 |
Excelliance MOS Corporation |
发明人 |
Chang Yi-Chi;Chen Ming-Chuan |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power switch device, comprising:
a transistor, comprising a source, a drain, and a gate, wherein a well region is disposed between the source and the drain; and an ESD protection circuit, wherein one end of the ESD protection circuit is coupled to the gate and another end thereof is coupled to the well region so as to form a protection circuit between the gate and the source and between the gate and the drain simultaneously. |
| 地址 |
Hsinchu County TW |
