| 摘要 |
Fabrication of a substrate, by a layer transfer technique, consists of: (a) implantation of species across a surface of a semiconductor source substrate; (b) sticking the source substrate on a support layer, the support layer initially having a certain quantity of interstitial oxygen; (c) detachment of the source substrate at the level of the implanted zone to form a thin layer; (d) finishing, the method also includes a series of heat treatments to precipitate in a controlled manner all or part of the interstitial oxygen to result in a desired resistance to the ulterior phenomena of the appearance of slip lines. At least one of the precipitation heat treatments is integrated into one operation of the method chosen from (i) heat treatment of detachment; (ii) thermal oxidation by a process of oxidation/deoxidisation during the finishing operation; (iii) heat treatment to reinforce the adhesion interface during the finishing operation. An independent claim is also included for a substrate fabricated by this method. |
