发明名称 Method of forming a device substrate and semiconductor package including a pyramid contact
摘要 A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.
申请公布号 US6905951(B2) 申请公布日期 2005.06.14
申请号 US20040862403 申请日期 2004.06.08
申请人 FUJITSU LIMITED 发明人 YONEDA YOSHIYUKI;MINAMIZAWA MASAHARU;WATANABE EIJI;SATO MITSUTAKA
分类号 H01L23/12;H01L21/48;H01L21/56;H01L21/68;H01L23/14;H01L23/31;H01L23/32;H01L23/498;(IPC1-7):H01L21/44;H01L21/302;H01L21/461 主分类号 H01L23/12
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