发明名称 |
Method of forming a device substrate and semiconductor package including a pyramid contact |
摘要 |
A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.
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申请公布号 |
US6905951(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20040862403 |
申请日期 |
2004.06.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
YONEDA YOSHIYUKI;MINAMIZAWA MASAHARU;WATANABE EIJI;SATO MITSUTAKA |
分类号 |
H01L23/12;H01L21/48;H01L21/56;H01L21/68;H01L23/14;H01L23/31;H01L23/32;H01L23/498;(IPC1-7):H01L21/44;H01L21/302;H01L21/461 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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