METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO REDUCE CONTACT RESISTANCE BY DECOUPLING FINE OXIDE LAYER AT CONTACT INTERFACE USING ANNEALING

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance by decoupling a fine oxide layer at contact interface using annealing under hydrogen gas atmosphere. CONSTITUTION: Gates(23) are formed on a semiconductor substrate(21) having an isolation layer(22). A spacer(24) is formed at both sidewalls of the gate. Ion-implantation processes for forming a source/drain and a junction are sequentially performed. An interlayer dielectric(25) is formed on the resultant structure to cover the gates. Contact holes are formed to expose the substrate between the gates by selectively etching the interlayer dielectric. Pretreatment is performed to remove particles on the exposed substrate. The resultant structure is loaded in a furnace and annealed to remove a fine oxide layer under hydrogen atmosphere containing PH3 gas. A contact plug(27) is formed by filling a polysilicon layer in the contact hole and planarized.