发明名称 Method and resulting structure for manufacturing semiconductor substrates
摘要 A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first thickness of compound semiconductor material overlying the metallic substrate and reducing a thickness of the first thickness of compound semiconductor material to a second thickness. The method includes forming one or more via structures through a portion of the second thickness of compound semiconductor material to a portion of the underlying metal substrate, whereupon the via structure electrically connects to the metal substrate.
申请公布号 US2004124501(A1) 申请公布日期 2004.07.01
申请号 US20030634512 申请日期 2003.08.04
申请人 CSIRO TELECOMMUNICATIONS AND INDUSTRIAL PHYSICS 发明人 CUNNINGHAM SHAUN JOSEPH
分类号 C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/20;H01L21/301;H01L21/44;H01L21/46;H01L21/48;H01L21/50;H01L21/60;H01L21/603;H01L21/768;H01L21/78;H01L23/14;(IPC1-7):H01L21/301 主分类号 C30B23/00
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