发明名称 |
Method and resulting structure for manufacturing semiconductor substrates |
摘要 |
A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first thickness of compound semiconductor material overlying the metallic substrate and reducing a thickness of the first thickness of compound semiconductor material to a second thickness. The method includes forming one or more via structures through a portion of the second thickness of compound semiconductor material to a portion of the underlying metal substrate, whereupon the via structure electrically connects to the metal substrate.
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申请公布号 |
US2004124501(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030634512 |
申请日期 |
2003.08.04 |
申请人 |
CSIRO TELECOMMUNICATIONS AND INDUSTRIAL PHYSICS |
发明人 |
CUNNINGHAM SHAUN JOSEPH |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/20;H01L21/301;H01L21/44;H01L21/46;H01L21/48;H01L21/50;H01L21/60;H01L21/603;H01L21/768;H01L21/78;H01L23/14;(IPC1-7):H01L21/301 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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