| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferroelectric thin film that is superior in covering properties and possessed of a stable interface by a method, wherein a ferroelectric material is formed through a sol/gel method or a sputtering method. SOLUTION: A ferroelectric capacitor has a structure, where a paraelectric bodies 532 and 533, are each provided as an insulating film between a ferroelectric body 531 and electrodes 534 and 535 respectively. In this way, an electrode is not brought into direct contact with a ferroelectric film, so that a ferroelectric material and an electrode are restrained from being inverted in a thermal treatment, which is carried out for the formation of an element, and the ferroelectric capacitor can be protected with respect to a failures such as a deterioration in breakdown strength. A paraelectric insulating film satisfactory in film quality is laminated, whereby a leakage current can be reduced, and electrodes can be enhanced in controllability and uniformity of potential. A ferroelectric thin film is formed through a sol/gel method or a sputtering method. In a sol/gel method, alkylate that contains Pb, Ti or the like is mixed into an organic solvent, the solvent is applied thinly onto a board and solidified into a film through heat treatment or irradiation with light. With this setup, a ferroelectric capacitor satisfactory in dielectric strength can be obtained. |
