| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that includes fuses and has an excellent yield. SOLUTION: A fuse part 110 consists of a plurality of fuses 20 that are melt by laser beam radiation is included in a semiconductor device. The fuse 20 is arranged with a pitch X and the upper surface of the fuse 20 is covered with a insulating film 36 of the predetermined thickness. The width W of the fuse 20 and the thickness T have a relation expressed in formula (1). Moreover, the width W of the fuse 20 is 3μm or less and less than half of the pitch X of the fuse 20. The thickness of the fuse 20 is 0.7μm or less. T>=0.4/W formula (1). |
