| 摘要 |
<p>A production device (1) for a semiconductor single crystal, designed such that a material melt (14) is stored in a crucible (12) placed in a growth furnace (2) and a semiconductor single crystal (23) is pulled up from the material melt (14) by a Czochralski method. A heat reflection layer (34) that reflects radiation heat from a heat source (14) disposed in the growth furnace (2) is formed on the surface of an in-furnace structure (31). The heat reflection layer (34) is a laminate of a plurality of element reflection layers each consisting of a material translucent to a radiation infrared ray from the heat source (14), and at least two adjacent element reflection layers consist of materials different from each other in refractive index with respect to radiation infrared ray. Accordingly, the production device for a semiconductor single crystal can efficiently control radiation heat from a heat source in a growth furnace, resulting in the improved quality of a semiconductor single crystal produced thereby and reduced production costs due to energy saving.</p> |
