DRY ETCH APPARATUS FOR ETCHING OXIDE LAYER

摘要

PURPOSE: A dry etch apparatus for etching an oxide layer is provided to make airtight the inside and the outside of a process chamber and prevent generation of particles by using a vespel ring in an etch process of the dry etch apparatus. CONSTITUTION: A baffle(52) is installed on a hole in the inside of an upper plate(50). An upper electrode(54) is installed at a lower portion of the upper plate(50). A vespel ring(56) is installed at a lower end of the upper electrode(54) in order to prevent a leakage of gas by shielding the inside and the outside of a chamber. A confinement ring(58) is installed at the upper plate(50) in order to support the vespel ring(56). A wafer chuck(62) is installed at a lower end of the inside of a dry etch apparatus. A wafer(60) is loaded on an upper surface of the wafer chuck(62).