NITRIDE SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a III-nitride semiconductor laser element and the manufacturing method therefor, where it has superior light-emitting characteristic and it is manufactured without processes requiring a high assembling accuracy. SOLUTION: In the semiconductor laser element where a III-nitride multilayered product and the substrate made of an easily cleavable material are bonded to each other, the substrate has a cutting portion for positioning the outgoing end portion of the laser beam of the multilayer product in the periphery of the cutting portion of the substrate.