发明名称 |
High resistivity silicon carbide single crystal |
摘要 |
The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity. |
申请公布号 |
SE0103602(D0) |
申请公布日期 |
2001.10.29 |
申请号 |
SE20010003602 |
申请日期 |
2001.10.29 |
申请人 |
OKMETIC AB |
发明人 |
ALEXANDRA *ELLISON;NGUYEN *TIEN SON;BJOERN *MAGNUSSON;ERIK *JANZEN |
分类号 |
C30B29/36;C30B25/00;H01L21/04;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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