| 摘要 |
The memory testing method has a given dataword (A) entered in a memory cell of a first memory location (1) and read out for comparison with the original dataword, the dataword (B) characterising the result of this comparison entered in a memory cell of a different memory location (2) and read out for providing a redundant analysis for replacement of defective memory cells by redundant memory cells. Each of the latter memory locations is incorporated in a different memory bank of the semiconductor memory and the dataword characterising the comparison result can be stored in parallel in corresponding memory cells of at least 3 memory banks (2,3,4).
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