| 摘要 |
PROBLEM TO BE SOLVED: To improve accuracy in manufacturing of a wiring, while keeping a current density in wiring. SOLUTION: After a wiring forming conductive film is formed on a semiconductor wafer 1, a resist film 12a is formed thereon. With an etching mask of this resist film 12a, the conductive film is etched and thinned to a halfway through in thickness in an isotropic dry-etching step. Then, by switching the etching treatment from isotropic dry etching to anisotropic dry etching, a wiring 11L is formed.
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