发明名称 |
Synchronous burst semiconductor memory device |
摘要 |
A synchronous burst semiconductor memory device with a pipelined multi-bit prefetch architecture includes separate internal address generators for respective read and write burst modes. The synchronous memory device also adopts an auto-tracking bit line scheme to reduce core cycle time, a shortened main data line for current reduction, a noise immune circuit having high-speed transfer characteristics through a dual-rail reset dynamic circuit, and strobe clocks synchronized with the output data to guarantee processor data-validation time.
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申请公布号 |
US6134180(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19990255971 |
申请日期 |
1999.02.23 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
KIM, SU-CHUL;PARK, HEE-CHOUL |
分类号 |
G11C7/10;G11C7/22;(IPC1-7):G11C8/00 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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