| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the retention property of a non-volatile semiconductor storage by machining a stack gate electrode, enabling an insulating film to grow on the side wall of a floating gate due to thermal oxidation, by performing thermal nitriding for the side wall of the floating gate, and by forming an interlayer insulating film. SOLUTION: A tunnel oxide film 2 is formed on a silicon semiconductor substrate 1, a stack gate electrode where floating and control gates 4 and 6 are laminated on the tunnel oxide film 2 is machined, and a field oxide film 3 being used as an insulating film is allowed to grow on the side wall of the floating gate 4 by thermal oxidation. Then, thermal nitriding is performed for the side wall of the floating gate 4 and an interlayer insulating film 9 is formed via an oxide film 8, thus improving the retention property of a nonvolatile semiconductor storage and increasing the capacity of a semiconductor memory.</p> |
