| 摘要 |
PROBLEM TO BE SOLVED: To shorten restoring time and make the rise speed of an SAP high, by increasing SAP driver capability without increasing a PN isolation region and decreasing SAN driver capability. SOLUTION: In a sense amplifier control circuit SWC 101 region wherein an SAP drive circuit is constituted of only an NMOS transistor, N-ch transistor driving is performed. In a sense amplifier control circuit 102 region constituted of only a PMOS transistor, P-ch transistor driving is performed. An SAP driver may drive at most two blocks of only the sense amplifier row which is in contact with the sense amplifier control circuit SWC 101 or SWC 102, so that a wiring CR and a sense amplifier source capacitance load are reduced. Thereby the SAP driver turned into an NMOS is separately arranged in a second cross part in the sense amplifier control circuit, so that the wiring delay at the remote end of an SAP wiring is reduced, and the restoring time can be shortened. |
