发明名称 Passivation/patterning of PZR diamond films for high temperature transducer operability
摘要 A method for passivating diamond films to substantially prevent them from oxidizing at temperatures up to 800 DEG C. in an oxygen atmosphere. The method involves depositing one or more passivating layers over the diamond film wherein one of the layers is nitride and the other layer is quartz. The passivation technique is directly applicable to diamond sensor pressure transducers and enable them to operate at temperatures above 800 DEG C. in oxygen environments. The passivation technique also provides an economical and simple method for patterning diamond films.
申请公布号 US5750898(A) 申请公布日期 1998.05.12
申请号 US19960727882 申请日期 1996.10.09
申请人 KULITE SEMICONDUCTOR PRODUCTS, INC. 发明人 KURTZ, ANTHONY D.;NED, ALEXANDER A.;VERGEL DE DIOS, TIMOTEO I.
分类号 G01L9/00;H01L21/314;(IPC1-7):G01L9/06 主分类号 G01L9/00
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