| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a gate resistance and can prevent crystal aggregation during formation of silicide of polysilicon and also prevent short-circuiting between a gate electrode and a source/drain region. SOLUTION: Formed on a silicon substrate 1 are a field oxide film 2, a silicon nitride film 3 as a gate insulating film, and a gate electrode 4 made of polysilicon (drawing (a)). The structure is subjected to a deposition of a silicon oxide film 5 and to an etch back process to form a side wall 5a on a side of the gate electrode and to remove the silicon nitride film 3 other than the formation of the side wall (drawing (b)). The structure is subjected to an ion implantation process to form a source/drain region 6, the side wall is eliminated (drawing (c)), and then subjected to a deposition of a titanium film 7 (drawing (d)). The structure is subjected to an annealing process to form a titanium silicide film 8 and to remove titanium not reacted (drawing (e)). The structure is further subjected to an anisotropic etching process for a short time to remove a silicide thin film 8a on the nitride film 3. |
