发明名称 REVERSE DAMASCENE VIA STRUCTURES
摘要 <p>A reliable interconnection pattern is formed by depositing first (7) and second conductive layers (8), etching to form a conductive pattern in the first conductive layer (7) and etching to form an interconnection comprising a portion of the second conductive layer (8).</p>
申请公布号 WO1997022144(A1) 申请公布日期 1997.06.19
申请号 US1996015510 申请日期 1996.09.27
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