发明名称 HIGH-VOLTAGE ELECTRIC CHARGE PUMP
摘要 <p>PURPOSE: To provide a charge pump efficient for performing write to an EEPROM. CONSTITUTION: In a charge pump circuit 50, a single clock signal CLK, voltage feedback constitution 54 capable of passing through a DC voltage and the plural pieces of transistors 53, 55 and 61 respectively serially connected to respective grounding gate transistors 51, 57 and 59 for removing inverse breakdown voltage loads on the grounding gate transistors are used.</p>
申请公布号 JPH05101685(A) 申请公布日期 1993.04.23
申请号 JP19920081183 申请日期 1992.04.02
申请人 NATL SEMICONDUCTOR CORP <NS> 发明人 BARU SANDEYU;FUREDORITSUKU KEI RIYUN
分类号 G11C17/00;G11C16/06;H03K17/06;H03K17/693 主分类号 G11C17/00
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