High temperature transducers and methods of fabricating the same employing silicon carbide
摘要
There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.
申请公布号
US5165283(A)
申请公布日期
1992.11.24
申请号
US19910694490
申请日期
1991.05.02
申请人
KULITE SEMICONDUCTOR PRODUCTS, INC.
发明人
KURTZ, ANTHONY D.;GOLDSTEIN, DAVID;SHOR, JOSEPH S.